@INPROCEEDINGS{crossbar_NANO08_Nauenheim,
author={Nauenheim, C. and others},
booktitle={Nanotechnology, 2008. NANO '08. 8th IEEE Conference on},
title={Nano-Crossbar Arrays for Nonvolatile Resistive RAM (RRAM) Applications},
year={2008},
month={Aug},
volume={},
number={},
pages={464 -467},
keywords={TiO2-Ti;device fabrication;nanocrossbar arrays;nonvolatile resistive RAM;nonvolatile resistively switching material;nanolithography;nanopatterning;random-access storage;semiconductor storage;titanium compounds;},
doi={10.1109/NANO.2008.141},
ISSN={},}

@INPROCEEDINGS{crossbar_unity,
author={Chevallier, C.J. and Chang Hua Siau and Lim, S.F. and Namala, S.R. and Matsuoka, M. and Bateman, B.L. and Rinerson, D.},
booktitle={Proceedings of IEEE International Solid-State Circuits Conference},
title={A 0.13 um 64Mb multi-layered conductive metal-oxide memory},
year={2010},
month={feb.},
volume={},
number={},
pages={260 -261},
keywords={CMOS circuitry;NAND-compatible nonvolatile memory testchip;decoding;multilayered conductive metal-oxide memory;sensing technique;size 0.13 micron;CMOS memory circuits;NAND circuits;random-access storage;},
doi={10.1109/ISSCC.2010.5433945},
ISSN={0193-6530},}

@INPROCEEDINGS{crossbar_NANO2002_Ziegler,
author={Ziegler, M.M. and Stan, M.R.},
booktitle={Proceedings of the 2nd IEEE Conference on Nanotechnology},
title={Design and analysis of crossbar circuits for molecular nanoelectronics},
year={2002},
volume={},
number={},
keywords={ circuit design; crossbar circuits; crossbar logic; crossbar logic representation; crossbar memory; molecular nanoelectronics; parameterized circuit models; logic circuits; molecular electronics; nanoelectronics; network analysis; network synthesis;},
doi={10.1109/NANO.2002.1032256},
ISSN={ },}


@INPROCEEDINGS{crossbar_NANO2003_Ziegler,
author={Ziegler, M.M. and Stan, M.R.},
booktitle={Nanotechnology, IEEE Transactions on},
title={CMOS/nano co-design for crossbar-based molecular electronic systems},
year={2003},
month={Dec},
volume={2},
number={4},
pages={ 217 - 230},
keywords={ CMOS/nano co-design; circuit paradigm; circuit simulation; crossbar-based molecular electronic systems; CMOS integrated circuits; VLSI; integrated circuit design; integrated circuit modelling; molecular electronics; nanotechnology; self-assembly;},
doi={10.1109/TNANO.2003.820804},
ISSN={1536-125X},}



@INPROCEEDINGS{crossbar_VLSID2008_Chakraborty,
author={Chakraborty, R.S. and Paul, S. and Bhunia, S.},
booktitle={VLSI Design, 2008. VLSID 2008. 21st International Conference on},
title={Analysis and Robust Design of Diode-Resistor Based Nanoscale Crossbar PLA Circuits},
year={2008},
month=jan.,
volume={},
number={},
pages={441 -446},
keywords={SPICE simulation;diode-resistor design;logic circuit design;logic level degradation estimation;molecular electronics;nanoscale crossbar PLA circuits;voltage level degradation;voltage level-aware circuit design technique;SPICE;electric potential;integrated circuit design;integrated circuit modelling;integrated logic circuits;logic design;molecular electronics;nanoelectronics;programmable logic arrays;},
doi={10.1109/VLSI.2008.44},
ISSN={1063-9667},}

@INPROCEEDINGS{crossbar_NANO08_Flocke,
author={Flocke, A. and others},
booktitle={Nanotechnology, 2008. NANO '08. 8th IEEE Conference on},
title={A Fundamental Analysis of Nano-Crossbars with Non-Linear Switching Materials and its Impact on TiO2 as a Resistive Layer},
year={2008},
month={Aug},
volume={},
number={},
pages={319 -322},
keywords={TiO2;crossbar arrays;nanocrossbars;nonlinear switching materials;resistive layer;sense amplifiers;titanium dioxide;voltage swing;electrical resistivity;nanoelectronics;semiconductor switches;titanium compounds;},
doi={10.1109/NANO.2008.101},
ISSN={},}

@ARTICLE{crossbar_TED_2010,
author={Liang, J. and Wong, H.-S.P.},
journal={Electron Devices, IEEE Transactions on},
title={Cross-Point Memory Array Without Cell Selectors -Device Characteristics and Data Storage Pattern Dependencies},
year={2010},
month={Oct},
volume={57},
number={10},
pages={2531 -2538},
keywords={I -V characteristics;cell selection devices;cross-point memory architecture;cross-point memory array;data storage pattern dependency;device characteristics;device density;interconnects;large-power dissipation;memory cell resistance value;parasitic resistance;resistance ratio;substantial sneak path leakages;write-read operations;interconnections;memory architecture;},
doi={10.1109/TED.2010.2062187},
ISSN={0018-9383},}
